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insulated gate bipolar transistor withultrafast soft recovery diode IRG7PH42UDpbf IRG7PH42UD-ep 1 www.irf.com 10/26/09 e g n-channel c v ces = 1200v i c = 45a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.7v features low v ce (on) trench igbt technology low switching losses square rbsoa 100% of the parts tested for i lm positive v ce (on) temperature co-efficient ultra fast soft recovery co-pak diode tight parameter distribution lead-free benefits high efficiency in a wide range of applications suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses rugged transient performance for increased reliability excellent current sharing in parallel operation applications u.p.s. welding solar inverter induction heating gc e gate collector emitter to-247ac IRG7PH42UDpbf to-247ad IRG7PH42UD-ep g c e c g c e c absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current (silicon limited) 85 i c @ t c = 100c continuous collector current (silicon limited) 45 i nominal nominal current 30 i cm pulse collector current, v ge = 15v 90 a i lm clamped inductive load current, v ge = 20v 120 i f @ t c = 25c diode continous forward current 85 i f @ t c = 100c diode continous forward current 45 i fm diode maximum forward current 120 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 320 w p d @ t c = 100c maximum power dissipation 130 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.39 r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 0.56 c/w r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC 40 CCC downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 22h, r g = 10 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at
calculated continuous current based on maximum allowable junction temperature.bond wire current limit is 78a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 100a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0 . 1 8v / c v ge = 0v, i c = 2.0ma (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.7 2.0 i c = 30a, v ge = 15v, t j = 25c 2 . 1 v i c = 30a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v v ce = v ge , i c = 1.0ma ? v ge(th) / ? tj threshold voltage temp. coefficient -14 mv/c v ce = v ge , i c = 1.0ma (25c - 150c) gfe forward transconductance 32 s v ce = 50v, i c = 30a, pw = 80s i ces collector-to-emitter leakage current 4.4 150 a v ge = 0v, v ce = 1200v 1 20 0 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop 2.0 2.4 v i f = 30a 2 . 2 i f = 30a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 157 236 i c = 30a q ge gate-to-emitter charge (turn-on) 21 32 nc v ge = 15v q gc gate-to-collector charge (turn-on) 69 104 v cc = 600v e on turn-on switching loss 2105 2374 i c = 30a, v cc = 600v, v ge = 15v e off turn-off switching loss 1182 1424 j r g = 10 , l = 200h,t j = 25c e total total switching loss 3287 3798 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 25 34 t r r i s e t i m e 3 24 1n s t d(off) turn-off delay time 229 271 t f fall time 63 86 e on turn-on switching loss 2978 i c = 30a, v cc = 600v, v ge =15v e off turn-off switching loss 1968 j r g =10 , l=200h, t j = 150c e total total switching loss 4946 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 19 t r rise time 32 ns t d(off) turn-off delay time 290 t f fall time 154 c ies input capacitance 3338 pf v ge = 0v c oes output capacitance 124 v cc = 30v c res reverse transfer capacitance 75 f = 1.0mhz t j = 150c, i c = 120a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 , v ge = +20v to 0v erec reverse recovery energy of the diode 1475 j t j = 150c t rr diode reverse recovery time 153 ns v cc = 600v, i f = 30a i rr peak reverse recovery current 34 a r g = 10 , l =1.0mh conditions downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 150c; v ge =15v fig. 4 - reverse bias soa t j = 150c; v ge = 20v fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tsink = 90c gate drive as specified power dissipation = 95w 60% of rated voltage i ideal diodes square wave: 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 i c ( a ) downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep 4 www.irf.com fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0 20 40 60 80 100 120 i f ( a ) -40c 25c 150c 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep www.irf.com 5 fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v fig. 13 - typ. energy loss vs. i c t j = 150c; l = 200h; v ce = 600v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 200h; v ce = 600v, i ce = 30a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 200h; v ce = 600v, i ce = 30a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l = 200h; v ce = 600v, r g = 10 ; v ge = 15v 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 0 20 40 60 80 100 r g ( ) 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e on e off 0 20 40 60 80 100 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 1 02 03 04 05 06 0 i c (a) 0 1000 2000 3000 4000 5000 6000 7000 e n e r g y ( j ) e off e on 0 10 20 30 40 50 60 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 4 6 8 10 12 v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep 6 www.irf.com fig. 19 - typ. diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 30a; t j = 150c fig. 20 - typ. diode q rr vs. di f /dt v cc = 600v; v ge = 15v; t j = 150c fig. 17 - typ. diode i rr vs. i f t j = 150c fig. 18 - typ. diode i rr vs. r g t j = 150c 15 20 25 30 35 40 45 50 55 60 i f (a) 10 20 30 40 50 i r r ( a ) r g = 5.0 r g = 10 r g = 100 r g = 47 0 200 400 600 800 1000 1200 di f /dt (a/s) 20 25 30 35 40 i r r ( a ) 0 20 40 60 80 100 r g ( ) 20 25 30 35 40 i r r ( a ) fig. 21 - typ. diode e rr vs. i f t j = 150c 15 20 25 30 35 40 45 50 55 60 i f (a) 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) r g = 5.0 r g = 10 r g = 47 r g = 100 0 200 400 600 800 1000 1200 1400 di f /dt (a/s) 2000 3000 4000 5000 6000 7000 8000 9000 q r r ( n c ) 5.0 10 100 47 30a 60a 15a downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep www.irf.com 7 fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 23 - typical gate charge vs. v ge i ce = 30a; l = 600h fig 24. maximum transient thermal impedance, junction-to-case (igbt) fig. 25. maximum transient thermal impedance, junction-to-case (diode) 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 20 40 60 80 100 120 140 160 180 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.1254 0.0005150.0937 0.000515 0.1889 0.001225 0.1511 0.018229 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.1306 0.0003130.1752 0.002056 0.0814 0.008349 0.0031 0.043100 downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.4 - resistive load circuit fig.c.t.3 - switching loss circuit 0 1k vcc dut l l rg 80 v dut vcc + - l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.5 - bvces filter circuit downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep www.irf.com 9 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -100 0 100 200 300 400 500 600 700 800 900 -0.5 0 0.5 1 1.5 2 time(s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) 90% i ce 5% v ce 5% i ce eof f loss t f -100 0 100 200 300 400 500 600 700 800 900 9.4 9.6 9.8 10 10.2 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) test current 90% test current 5% v ce 10% test current t r eon loss -40 -30 -20 -10 0 10 20 30 40 -0.25 0.00 0.25 0.50 0.75 1.00 time (s) i f (a) pe a k i rr t rr e rec 10% pe a k irr downloaded from: http:///
IRG7PH42UDpbf/IRG7PH42UD-ep 10 www.irf.com

to-247ac package is not recommended for surface mount application.

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IRG7PH42UDpbf/IRG7PH42UD-ep www.irf.com 11 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2009 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site.

to-247ad package is not recommended for surface mount application.
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